SI2351DS features ? halogen-free opti on available ? trenchfet ? power mosfet ? pwm optimized ? 100 % r g tested mosfet product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) - 20 0.115 at v gs = - 4.5 v - 3.0 3.2 nc 0.205 at v gs = - 2.5 v - 2.2 g t o -236 (sot-23) s d top v ie w 2 3 1 SI2351DS (g1)* * marking code orderin g information: SI2351DS-t1-e3 (lead (p b )-free) SI2351DS-t1-ge3 (lead (p b )-free and halogen-free) notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 130 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) t c = 25 c i d - 2.8 a t c = 70 c - 2.4 t a = 25 c - 2.2 b, c t a = 70 c - 1.8 b, c pulsed drain current i dm - 10 continuous source-drain diode current t c = 25 c i s - 2.0 t a = 25 c - 0.91 b, c maximum power dissipation t c = 25 c p d 2.1 w t c = 70 c 1.5 t a = 25 c 1.0 b, c t a = 70 c 0.7 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d 5 s r thja 90 115 c/w maximum junction-to-foot (drain) steady state r thjf 60 75 rohs compliant product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. mosfet specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v ds = 0 v, i d = - 250 a - 20 v v ds temperature coefficient v ds /t j i d = - 250 a - 16.7 mv/c v gs(th) temperature coefficient v gs(th) /t j 2.1 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.6 - 1.5 v gate-source leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 10 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 2.4 a 0.092 0.115 v gs = - 2.5 v, i d = - 1.8 a 0.164 0.205 forward transconductance a g fs v ds = - 10 v, i d = - 2.4 a 5.5 s dynamic b input capacitance c iss v ds = - 10 v, v gs = 0 v, f = 1 mhz 250 pf output capacitance c oss 80 reverse transfer capacitance c rss 55 total gate charge q g v ds = - 10 v, v gs = - 5.0 v, i d = - 2.4 a 3.4 5.1 nc v ds = - 10 v, v gs = - 4.5 v, i d = - 2.4 a 3.2 5 gate-source charge q gs 0.5 gate-drain charge q gd 1.4 gate resistance r g f = 1 mhz 8.5 13 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 5.26 i d ? - 1.9 a, v gen = - 4.5 v, r g = 1 914 ns rise time t r 30 45 turn-off delay time t d(off) 32 48 fall time t f 16 24 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 2.0 a pulse diode forward current a i sm - 10 body diode voltage v sd i s = - 2.0 a - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 2.0 a, di/dt = 100 a/s, t j = 25 c 17 26 ns body diode reverse recovery charge q rr 58nc reverse recovery fall time t a 14 ns reverse recovery rise time t b 3 SI2351DS product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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